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Influence of Rare-Earth Additives (La, Sm and Dy) on the Microstructure and Dielectric Properties of Doped BaTiO_3 Ceramics

机译:稀土添加剂(La,Sm和Dy)对掺杂BaTiO_3陶瓷微结构和介电性能的影响

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A series of La/Mn, Sm/Mn and Dy/Mn codoped BaTiO_3 samples were prepared by the conventional solid state procedure with dopant concentrations ranging from 0.1 up to 2.0 at%. The specimens were sintered at 1320℃ and 1350℃ in an air atmosphere for two hours. The low doped samples demonstrated a mainly uniform and homogeneous microstructure with average grain sizes ranging from 0.3 μm to 5.0 μm. The appearance of secondary abnormal grains in the fine grain matrix and core-shell structure were observed in highly doped La/BaTiO_3 and Dy/BaTiO_3 sintered at 1350℃. The low doped samples, sintered at 1350℃, display a high value of dielectric permittivity at room temperature, 6800 for Sm/BaTiO_3, 5900 for Dy/BaTiO_3 and 3100 for La/BaTiO_3. A nearly flat permittivity-response was obtained in specimens with 2.0 at% additive content. Using a modified Curie-Weiss law the Curie-like constant C and a critical exponent γ were calculated. The obtained values of γpointed out the diffuse phase transformation in heavily doped BaTiO3 samples.
机译:通过常规固态方法制备了一系列La / Mn,Sm / Mn和Dy / Mn共掺杂的BaTiO_3样品,掺杂剂浓度范围为0.1至2.0 at%。将样品在空气气氛中于1320℃和1350℃下烧结两个小时。低掺杂样品表现出主要均匀且均匀的微观结构,平均晶粒尺寸为0.3μm至5.0μm。在1350℃烧结的高掺杂La / BaTiO_3和Dy / BaTiO_3中观察到细晶粒基体和核-壳结构中的次生异常晶粒的出现。在1350℃烧结的低掺杂样品在室温下显示出高介电常数,Sm / BaTiO_3为6800,Dy / BaTiO_3为5900,La / BaTiO_3为3100。在添加剂含量为2.0 at%的样品中,获得了几乎平坦的介电常数响应。使用修改后的居里-魏斯定律,计算出居里常数C和临界指数γ。所获得的γ值指出了重掺杂BaTiO3样品中的扩散相变。

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