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Effects of additives on the sintering temperature and dielectric properties of ZnTIO_3 based ceramic

机译:添加剂对ZnTIO_3基陶瓷烧结温度和介电性能的影响

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摘要

The effects of various additives, namely ZnO-B_2O_3-SiO_2 (ZSB), B_2O_3 and B_2O_3 + LiF on the lowering of sintering temperature and dielectric properties of ZnTiO_3 based ceramics were investigated. From the dilatometric studies, it was shown that the sintering temperature is significantly lowered owing to the addition of 15 mol. percent of ZSB or of the addition of 15 mol. percent of B_2O_3: ZSB added sample can be sintered at 950 deg C and B_2O_3 added one at 1000 deg C whereas pure compound hence can be sintered at 1100 deg C. The most interesting result concerns the ZSB added sample sintered at 950 deg C during 4 h which exhibits a density higher than 92 percent of the theoretical one, high dielectric constant (epsilon_r approx = 25) and low dissipation factor (tan(delta) < 10~(-3)) in the range -60 deg C/160 deg C at 1 MHz. The temperature coefficient of the dielectric constant is also reasonable (epsilon approx = -150 ppm/DC) as well as the temperature coefficient of the resonant frequency (|tau_f| < 100ppm/ deg C). This formulation should be consequently a suitable candidate for low-temperature co-fired ceramics (LTCCs).
机译:研究了ZnO-B_2O_3-SiO_2(ZSB),B_2O_3和B_2O_3 + LiF等多种添加剂对降低ZnTiO_3基陶瓷烧结温度和介电性能的影响。从膨胀学研究表明,由于添加了15mol,烧结温度显着降低。 %的ZSB或添加15mol。 B_2O_3的百分比:可以在950摄氏度下烧结添加ZSB的样品,而B_2O_3可以在1000摄氏度下烧结一个,而纯化合物因此可以在1100摄氏度的条件下烧结。最有趣的结果涉及在4℃下在950摄氏度下烧结的ZSB的样品h的密度高于理论值的92%,在-60摄氏度/ 160摄氏度的范围内具有高介电常数(ε_r大约= 25)和低耗散因数(tan(delta)<10〜(-3)) C在1 MHz。介电常数的温度系数(谐振子的ε= -150ppm / DC)以及共振频率的温度系数(| tau_f | <100ppm /℃)也是合理的。因此,该配方应适合作为低温共烧陶瓷(LTCC)的候选材料。

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