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Effects of buffer layers on properties of bulk hetero junction flexible organic solar cells

机译:缓冲层对整体异质结柔性有机太阳能电池性能的影响

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We fabricated the flexible organic solar cells (OSCs) using the alternating co-polymer, poly[iV-9"-hepta-decanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',l',3'-benzothiadiazole) (PCDTBT) in bulk hetero junction composites with the fullerene derivative [6,6]-phenyl C_(61)-butyric acid methyl ester (PCBM) active layer for the electron donor and acceptor materials, respectively. The active layer was spin-coated onto various substrates with different buffer layers of lithium fluoride (LiF) and poly(3,4-ethylenedioxythiophene):poly(styr-cnesulfonate) (PEDOT:PSS) on the indium tin oxide (ITO) coated polyethylene naphthalene (PEN) substrates, such as PEN/ITO/LiF, PEN/1TO/PEDOT:PSS and PEN/ITO/PEDOT:PSS/LiF. The effects of the buffer layer position on the electrical and morphological properties of the devices were investigated. The performance of OSCs coated on the PEN/ITO/PEDOT:PSS/LiF substrate exhibited the best electrical property among the prepared samples, showing the maximum short circuit current, open circuit voltage, fill factor and power conversion efficiency values were about 11.4mA/cm~2, 0.90 V, 39.3 % and 4.0 %, respectively.
机译:我们使用交替共聚物聚[iV-9“-庚-癸二基-2,7-咔唑-alt-5,5-(4',7'-di-2)制备了柔性有机太阳能电池(OSC)电子体中具有富勒烯衍生物[6,6]-苯基C_(61)-丁酸甲酯(PCBM)活性层的本体异质结复合材料中的-噻吩基-2',l',3'-苯并噻二唑)(PCDTBT)分别将活性层旋涂到具有不同缓冲层的各种基材上,所述缓冲层上有氟化锂(LiF)和聚(3,4-乙撑二氧噻吩):聚(苯乙烯磺酸钠)(PEDOT:PSS)。氧化铟锡(ITO)涂层的聚乙烯萘(PEN)衬底,例如PEN / ITO / LiF,PEN / 1TO / PEDOT:PSS和PEN / ITO / PEDOT:PSS / LiF。缓冲层位置对电气的影响在制备的样品中,涂在PEN / ITO / PEDOT:PSS / LiF衬底上的OSC的电性能最佳,表现出最大的短路强度。刺激电流,开路电压,填充系数和功率转换效率值分别约为11.4mA / cm〜2、0.90 V,39.3%和4.0%。

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