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High-current measurement of the grain resistivity in zinc oxide varistor ceramics

机译:大电流测量氧化锌压敏电阻陶瓷中的晶粒电阻率

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摘要

A new pulse technique for grain resistivity measurement in varistor ceramics is suggested. Such technique allows obtaining more precise value of the grain resistivity due to the use of the concept of differential electrical resistance. This technique can be used in the current density range where the overheating of varistor sample is insignificant. The technique was verified using commercial ZnO varistors. Grain resistivities of 0.60 ± 0.02 Ω cm at 293 K and of 3.40 ± 0.13Ω cm at 77 K were obtained. This result indicates the negative temperature coefficient of grain resistance in ZnO varistor in the range (77-293) K. The contribution of the grain boundaries to the current-voltage characteristic of ZnO varistor is estimated on the basis of the measured grain resistivity and the current-voltage data. It is shown that the electrical conduction in ZnO varistor is controlled by grains if the current density exceeds approximately 1000 A cm~(-2).
机译:提出了一种新的用于压敏电阻陶瓷中电阻率测量的脉冲技术。由于使用了差动电阻的概念,这种技术允许获得更精确的晶粒电阻率值。此技术可用于压敏电阻样品过热程度不大的电流密度范围内。使用商用ZnO压敏电阻验证了该技术。晶粒电阻率在293 K下为0.60±0.02Ωcm,在77 K下为3.40±0.13Ωcm。该结果表明ZnO压敏电阻中的晶粒电阻的负温度系数在(77-293)K范围内。基于测得的晶粒电阻率和电阻率,估算了晶界对ZnO压敏电阻电流-电压特性的贡献。电流电压数据。结果表明,当电流密度超过1000 A cm〜(-2)时,ZnO压敏电阻的导电性受到晶粒的控制。

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