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首页> 外文期刊>Optics and Spectroscopy >Influence of Ar, Ne, Xe, and CCl_(4) Impurities on Luminescence Kinetics of Cd II Ions (5s~(2) ~(2)D_(5/2)-5p ~(2)P_(3/2) Transition, lambda velence 441.6 nm) in He-Cd Mixture
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Influence of Ar, Ne, Xe, and CCl_(4) Impurities on Luminescence Kinetics of Cd II Ions (5s~(2) ~(2)D_(5/2)-5p ~(2)P_(3/2) Transition, lambda velence 441.6 nm) in He-Cd Mixture

机译:Ar,Ne,Xe和CCl_(4)杂质对Cd II离子(5s〜(2)〜(2)D_(5/2)-5p〜(2)P_(3/2)跃迁的发光动力学的影响,λvelence 441.6 nm)在He-Cd混合物中

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The luminescence kinetics of the Cd II ion at a wavelength of 441.6 nm has been studied experimentally in a high-pressure He-Cd mixture in the presence of Ar, Ne, Xe, and CCl_(4) impurities. Cadmium ions were excited through the bombardment of a cadmium foil heated up to 240 deg C by a pulsed electron beam with an electron energy of 150 keV, a pulse duration of 3 ns, and a current of 500 A. The constants of collisional quenching of the Cd II 5s~(2) ~(2)D_(5/2) level by Ar, Ne, and Xe atoms and CCl_(4) molecules and the integral luminescence quenching constants of this level in the helium medium by these impurity gases have been determined. The constants of collisional quenching appeared to be 8.1 X 10~(-12) (Ar), 1.2 X 10~(-12) (Xe), 1.5 X 10~(-13) (Ne), and 1.8 X 10~(-10) cm~(3)/s (CCl_(4), for lambda velence 325 nm), while the integral constants were found to be, respectively, 4.1 X 10~(-11), 3.4 X 10~(-11), 9.5 X 10~(-12), 1.4 X 10~(-9) cm~(3)/s for Ar, Ne, Xe, and CCl_(4) at a buffer gas pressure of 1 atm.
机译:在Ar,Ne,Xe和CCl_(4)杂质存在下,在高压He-Cd混合物中实验研究了Cd II离子在441.6 nm波长处的发光动力学。镉离子是通过脉冲电子束轰击加热到240摄氏度的镉箔而激发的,脉冲电子束的电子能量为150 keV,脉冲持续时间为3 ns,电流为500A。C的碰撞猝灭常数Ar,Ne,Xe原子和CCl_(4)分子对Cd II 5s〜(2)〜(2)D_(5/2)的能级以及这些杂质气体在氦介质中该能级的积分发光猝灭常数已经确定。碰撞猝灭的常数为8.1 X 10〜(-12)(Ar),1.2 X 10〜(-12)(Xe),1.5 X 10〜(-13)(Ne)和1.8 X 10〜( -10)cm〜(3)/ s(CCl_(4),对于lambda velence 325 nm),而积分常数分别为4.1 X 10〜(-11),3.4 X 10〜(-11 ),在1 atm的缓冲气体压力下,对于Ar,Ne,Xe和CCl_(4),为9.5 X 10〜(-12),1.4 X 10〜(-9)cm〜(3)/ s。

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