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首页> 外文期刊>Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic >Morphological, structural, optical and electrical properties of PbS nanocrystals doped with Fe2+ grown by chemical bath
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Morphological, structural, optical and electrical properties of PbS nanocrystals doped with Fe2+ grown by chemical bath

机译:化学浴法掺杂Fe2 +掺杂的PbS纳米晶体的形貌,结构,光学和电学性质

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Doping of PbS nanocrystals with Fe2+ ions leads to changes in properties that make them useful in technology of thin films devices. In this paper we present the growth of PbS doped systematically with the solution containing the Fe2+ ions (V[Fe2+]) using the green chemical bath approach, with the goal of studying the effects of such Fe2+-doping on the morphological, structural, electrical and some optical properties of the PbS thin films obtained. The morphological changes of the films were followed by Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). X-ray diffraction showed growth of all films in the zinc blende phase. The grain size was found to be similar to 29 and similar to 21-17 nm, for the undoped and doped sample, respectively. The absorbance showed in doped films a weak shoulder located at similar to 625 nm (1.98 eV), and this exciton peak was attributed to a S-1(e) -> S-1(h) transition. A shift for the band gap energy was observed by optical absorption from similar to 1.56 eV for the undoped sample to similar to 2.20-2.25 eV range for the doped films. The resistivity increased from similar to 26.13-295.7 (Omega cm), and with respect to the electrical conductivity, mobility decreased from similar to 8.8 x 10(-4)-2.1 x 10(-7) (Omega cm)(-1), similar to 720.1-2.1 cm(2) V-1 S-1 and carrier from similar to 1.9 x 10(15)-4.2 x 10(12) cm(-3), while increasing V[Fe2+]. (C) 2016 Elsevier GmbH. All rights reserved.
机译:用Fe2 +离子掺杂PbS纳米晶体会导致性能变化,从而使其可用于薄膜器件技术。在本文中,我们介绍了使用绿色化学浴法系统地掺杂含Fe2 +离子(V [Fe2 +])的溶液中PbS的生长,目的是研究此类Fe2 +掺杂对形态,结构,电学的影响。以及所获得的PbS薄膜的一些光学性质。通过原子力显微镜(AFM)和扫描电子显微镜(SEM)跟踪膜的形态变化。 X射线衍射显示在锌共混相中所有膜的生长。发现未掺杂和掺杂样品的晶粒尺寸分别类似于29和21-17nm。掺杂膜中的吸光度显示出一个弱的肩峰,位于类似于625 nm(1.98 eV)的位置,此激子峰归因于S-1(e)→S-1(h)跃迁。通过光吸收观察到带隙能量从未掺杂样品的大约1.56 eV到掺杂膜的大约2.20-2.25 eV范围的变化。电阻率从类似值增加到26.13-295.7(Omega cm),相对于电导率,迁移率从类似值降低到8.8 x 10(-4)-2.1 x 10(-7)(Omega cm)(-1) ,类似于720.1-2.1 cm(2)V-1 S-1,载体从类似于1.9 x 10(15)-4.2 x 10(12)cm(-3)增大V [Fe2 +]。 (C)2016 Elsevier GmbH。版权所有。

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