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首页> 外文期刊>Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter >EFFECT OF A LOW CHROMIUM IMPURITY ON PROPERTIES OF PHOTOINDUCED CHARGE CARRIERS IN BI12TIO20 AND BI12SIO20 SINGLE CRYSTALS
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EFFECT OF A LOW CHROMIUM IMPURITY ON PROPERTIES OF PHOTOINDUCED CHARGE CARRIERS IN BI12TIO20 AND BI12SIO20 SINGLE CRYSTALS

机译:低铬杂质对BI12TIO20和BI12SIO20单晶中光诱导电荷载体性质的影响

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The influence of low (similar to 10(-4) wt.%) chromium concentrations on the photorefractive properties of sillenite crystals have been studied by holographic techniques. The presence of chromium decreases the diffusion length of photoexcited carriers in both Bi12SiO20 and Bi12TiO20 crystals, whereas the Debye screening length decreases only in BSO samples. This means that the chromium present in BTO crystals does not increase the number of the free traps. Small concentrations of chromium in BSO crystal displace the maximum of the gain factor to higher spatial frequencies that could be useful for some applications. [References: 8]
机译:已经通过全息技术研究了低(约10(-4)wt。%)铬浓度对亚硅酸盐晶体的光折射特性的影响。铬的存在会降低Bi12SiO20和Bi12TiO20晶体中光激发载流子的扩散长度,而德拜屏蔽长度仅在BSO样品中会减小。这意味着BTO晶体中存在的铬不会增加自由陷阱的数量。 BSO晶体中的铬浓度低,将增益因子的最大值移至较高的空间频率,这可能对某些应用有用。 [参考:8]

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