Evaluation of Focused O{sup}+ Ion Beams as a Tool for Making Resist Masks by Reactive Etching

摘要

A method of reactive etching is proposed in which focused 100-eV O{sup}+ ion beams are used for making organic-resist masks 12-24 nm thick with nanometer-sized apertures. Focused-ion-beam and ion-projection-lithography systems with an electrostatic immersion decelerating objective are considered. They are shown to provide an ultimate lateral resolution of ～14 or ～21 nm, respectively. Attainable etch rate is estimated. The potential usefulness of resist masks thus obtained is discussed in the context of quantum-computing devices containing quantum dots, quantum wires, and nanoscale conducting tracks.