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Flexible quantum dot light emitting diodes based on ZnO nanoparticles

机译:基于ZnO纳米粒子的柔性量子点发光二极管

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摘要

Flexible quantum dot light emitting diodes (QLEDs) have attracted extensive attention owing to the advantages of foldability and their broad application in flexible display devices. In this work, we report high performance, mechanically flexible QLEDs based on ZnO nanoparticles used as an electron transfer layer (ETL). The QLEDs have been fabricated on poly(ethylene-terephthalate) (PET) substrates utilizing a unique structure consisting of bilayered hole transport films and ZnO nanoparticles acting as an ETL to improve the device performance owing to its appropriate energy band position and high charge mobility. The QLEDs exhibited high performance, such as a lowered turn on voltage of 1.6 V and improved current and power efficiencies of 5.20 cd A(-1) and 1.80 lm W-1, respectively. They presented good flexibility with a critical bending radius of 4.5 mm, suggesting the broad application potential of flexible QLEDs.
机译:柔性量子点发光二极管(QLED)由于其可折叠性的优点及其在柔性显示装置中的广泛应用而引起了广泛的关注。在这项工作中,我们报告了基于用作电子传输层(ETL)的ZnO纳米粒子的高性能,机械柔性QLED。 QLED已在聚对苯二甲酸乙二醇酯(PET)基板上制造,利用由双层空穴传输膜和充当ETL的ZnO纳米颗粒组成的独特结构,由于其合适的能带位置和高电荷迁移率而提高了器件性能。 QLED表现出较高的性能,例如降低了1.6 V的开启电压,改善了电流和功率效率,分别为5.20 cd A(-1)和1.80 lm W-1。它们具有4.5 mm的临界弯曲半径,具有良好的柔韧性,表明了柔性QLED的广泛应用潜力。

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