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Physicochemical performance of FeCO3 films influenced by anions

机译:阴离子对FeCO3薄膜理化性能的影响

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The corrosion film plays an important role in the further electrochemical processes of steel in CO2 corrosion. Thus, the physicochemical performance of an FeCO3 film was investigated using the Mott-Schottky electrochemical technique, potentiodynamic polarization, electrochemical impedance spectroscopy (EIS), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The performance of the FeCO3 film was dependent on the aqueous solution. In 0.5 mol L-1 NaHCO3 solution, an n-type semiconducting behavior was found for the FeCO3 film. The dense microstructure and lower interstitial cation or anion vacancy doping was in favor of strong corrosion resistance of the film. On the contrary, a p-type semiconducting behavior of the FeCO3 film was exhibited in both 0.5 mol L-1 NaCl solution and 0.5 mol L-1 Na2SO4 solution. Higher cation vacancy doping was found, and the integrity of the microstructure was damaged, which decreased the transfer resistance of electron and mass. As a result, the protective ability of the FeCO3 film was decreased. The physicochemical mechanism for the semiconducting properties of the FeCO3 film was explained using the Point Defect Model (PDM).
机译:腐蚀膜在钢在CO2腐蚀中的进一步电化学过程中起着重要作用。因此,使用Mott-Schottky电化学技术,电势极化,电化学阻抗谱(EIS),X射线衍射(XRD)和扫描电子显微镜(SEM)研究了FeCO3膜的物理化学性能。 FeCO 3膜的性能取决于水溶液。在0.5 mol L-1 NaHCO3溶液中,发现FeCO3膜具有n型半导体行为。致密的微观结构和较低的间隙阳离子或阴离子空位掺杂有利于薄膜的强耐腐蚀性。相反,在0.5 mol L-1 NaCl溶液和0.5 mol L-1 Na2SO4溶液中均表现出FeCO3膜的p型半导体行为。发现较高的阳离子空位掺杂,并且破坏了微结构的完整性,这降低了电子和质量的转移阻力。结果,FeCO 3膜的保护能力降低。使用点缺陷模型(PDM)解释了FeCO3薄膜的半导体性质的物理化学机理。

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