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Shaped crystal growth and scintillating properties of Yb : (Gd, Lu)(3)Ga5O12 solid solutions

机译:Yb:(Gd,Lu)(3)Ga5O12固溶体的定形晶体生长和闪烁特性

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摘要

Shaped single crystals of (LuxGd1-x)(3)Ga5O12 (0.0 less than or equal to x less than or equal to 1.0) and (Yb0.05LuxGd0.95-x)(3)Ga5O12 (0.0 less than or equal to x less than or equal to 0.9) were grown by the modified micro-pulling-down method. Continuous solid solutions with garnet structure and a linear compositional dependency of crystal lattice parameter in the system Yb:(Gd, Lu)(3)Ga5O12 are formed. Measured optical absorption spectra of the samples show 4f-4f transitions related to Gd3+ ion at 275 and 310 nm, and also an onset of charge transfer transitions from oxygen ligands to Gd3+ or Yb3+ cations below 240 nm. A complete absence of Yb3+ charge transfer luminescence under X-ray excitation in any of the investigated samples was explained by the overlapping of charge transfer absorption of Yb3+ by that of Gd3+ ions. For specific composition of Lu1.5Gd1.5Ga5O12 an intense defect-host lattice-related emission, which achieve of about 40% integrated intensity compared with Bi4Ge3O12, was found. (C) 2004 Elsevier Ltd. All rights reserved.
机译:(LuxGd1-x)(3)Ga5O12(0.0小于或等于x小于或等于1.0)和(Yb0.05LuxGd0.95-x)(3)Ga5O12(0.0小于或等于x小于或等于0.9)通过改良的微拉法生长。在系统Yb:(Gd,Lu)(3)Ga5O12中形成了具有石榴石结构和晶格参数线性依赖关系的连续固溶体。样品的测得的光吸收光谱显示在275和310 nm处与Gd3 +离子有关的4f-4f跃迁,并且在240 nm以下还发生了从氧配体到Gd3 +或Yb3 +阳离子的电荷转移跃迁。在任何研究的样品中,X射线激发下都完全没有Yb3 +电荷转移发光,这是由于Yb3 +的电荷转移吸收与Gd3 +离子的转移吸收重叠造成的。对于Lu1.5Gd1.5Ga5O12的特定组成,发现了与Bi4Ge3O12相比约40%的集成强度的强烈的缺陷-主体晶格相关发射。 (C)2004 Elsevier Ltd.保留所有权利。

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