Photo-polymerization of photocurable resins containing polyhedral oligomeric silsesquioxane methacrylate

摘要

The polyhedral oligomeric silsesquioxane (POSS) structure comprises a cubic cage of silicon and oxygen atoms with an outer surface substituted by organic groups. POSS organic-inorganic hybrid materials are known to possess enhanced thermal stability, dimensional stability, high Tg and low dielectric constants. The authors have previously reported the development of POSS-containing negative-type photoresist materials for UV lithography.