Spin-valve transistors with high magnetocurrent and 40 μA output current

摘要

The electrical characteristics of silicon-based spin-valve transistors are reported, focusing on how the output current and magnetocurrent depend on the magnitude of the emitter current. Transistors with a different combination of Schottky barriers (Si/Au and Si/Cu) were used. The collector current rapidly increases with emitter current, without significant loss of magnetocurrent. Spin-valve transistors with magnetocurrent around 400 and high output current up to 40 μA are obtained.