Controllable growth of γ-GeSe microflakes by vapor phase deposition via rapid cooling strategy

摘要

γ-GeSe has recently emerged as a promising material for electronics and optoelectronics due to its unique band structure and excellent electrical properties. However, controllable growth of γ-GeSe remains a significant challenge. In this work, the controllable growth of γ-GeSe microflakes (MFs) on a mica substrate was reported by vapor phase deposition via a rapid cooling strategy. The screw dislocation-driven growth behavior is confirmed based on systematic characterizations. Our experimental results demonstrate that the stress induced during the rapid cooling process is critical for the controllable synthesis of γ-GeSe MFs and corresponding growth mechanism was proposed. Our work provides a new experimental strategy for the controlled growth of γ-GeSe MFs, which is beneficial for constructing GeSe-based nanoelectronic and optoelectronic devices.