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The impedance caused by interfacial current constriction: a case study on BaF2/YSZ bicrystals

机译:界面电流收缩引起的阻抗:以BaF2 / YSZ双晶体为例

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BaF2/YSZ (yttria stabilized zirconia) bicrystals are investigated by means of impedance spectroscopy. The spectra show two semicircles in the complex impedance plane, and both arcs exhibit very similar temperature dependences. The high frequency semicircle can be attributed to the ideal (quasi one-dimensional) bulk resistance of BaF2, and the low frequency arc is caused by an additional resistance in BaF2 due to the current constriction taking place close to the contact spots at the imperfect bicrystal interface. This interpretation is supported by finite element calculations revealing that bicrystals with imperfect contacts indeed exhibit an additional semicircle in the complex impedance plane even without any ion transfer resistance between the two crystals. The low frequency arc of the BaF2/YSZ bicrystal drastically increases upon bias voltage, but relaxes to its original value after removing the bias. This phenomenon can be associated with a strong decrease of the vacancy concentration in YSZ (close to the interfacial contact spots), which is caused by F~-ions being pumped into YSZ and acting as a counter dopant to Y~(3+).
机译:BaF2 / YSZ(氧化钇稳定的氧化锆)双晶通过阻抗谱研究。光谱在复阻抗平面中显示了两个半圆,并且两个电弧都显示出非常相似的温度依赖性。高频半圆可归因于BaF2的理想(准一维)体电阻,而低频电弧是由于BaF2中的附加电阻引起的,这是由于电流收缩发生在不完美双晶的接触点附近接口。这种解释得到了有限元计算的支持,这表明具有不完美接触的双晶确实在复数阻抗平面中确实表现出一个附加的半圆,即使在两个晶体之间没有任何离子转移阻力。 BaF2 / YSZ双晶的低频电弧在偏置电压下会急剧增加,但在消除偏置后会松弛到其原始值。这种现象可能与YSZ(靠近界面接触点)中空位浓度的强烈降低有关,这是由于F〜离子被泵入YSZ并充当Y〜(3+)的反掺杂剂而引起的。

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