A transmission electron microscopy investigation of sulfide nanocrystals formed by ion implantation

摘要

Ion implantation was used to form compoundsemiconductor nanocrystal precipitates of ZuS, Cds, and PbS inboth glass and crystalline matrices. The precipitate microstructuresand size distributions were investigated by cross-sectionaltransmission electron microscopy techniques. Several unusualfeatures were observed, including strongly depth-dependent sizevariations of the ZnS precipitates and central void features in theCdS nanocrystals. The morphology and crystal structure of thenanocrystal precipitates could be controlled by selection of thehost material. The size distribution and microstructural complexitywere significantly reduced by implanting a low concentration ofions into a noncrystalline host, and by using multi-energy implantsto give a flat concentration profile of the implanted elements.