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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

机译:二维过渡金属二卤化物的电子学和光电子学

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摘要

The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS 2, MoSe 2, WS 2 and WSe 2 have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
机译:石墨烯的卓越性能引起了人们对具有独特电子和光学属性的二维无机材料的兴趣。过渡金属二硫化碳(TMDC)是具有强平面内键合和弱平面外相互作用的层状材料,可剥落成单个晶胞厚度的二维层。尽管已经对TMDC进行了数十年的研究,但是纳米级材料表征和器件制造方面的最新进展为纳米电子学和光电子学中的二维TMDC薄层开辟了新的机遇。 TMDC(例如MoS 2,MoSe 2,WS 2和WSe 2)具有相当大的带隙,可以在单层中从间接更改为直接,从而可以用于晶体管,光电探测器和电致发光器件。我们回顾了TMDC的历史发展,制备原子薄层的方法,其电子和光学特性以及电子学和光电子学未来的发展前景。

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