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ELECTRONIC PROPERTIES OF THIN FILMSSUBLIMED FROM La@C_(82)AND Li@C_(60)

机译:La @ C_(82)和Li @ C_(60)薄膜的电子性质

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摘要

La@C_(82)and Li@C_(60)thin films obtained by sublimation in vacuum are studied using four-probecurrent–voltage measurements and atomic force microscopy. In situ electrical measurementsshow semiconducting behavior of both films with room-temperature resistivity of 21 ± 8 and1230 ± 50 C2 · cm for the La@C_(82)and Li@C_(60), respectively. A variable range hopping mechanismof conductance is suggested from the temperature dependences of resistance. The activationenergies for electron transport are calculated for both metallofullerenes. Irreversible changes tothe Li@C_(60)film structure increasing the resistivity to values typical forC60are found atelevated temperatures. The effect of exposure to ambient atmosphere on the conductance of thefilms is discussed.
机译:使用四探针电流电压测量和原子力显微镜研究了通过真空升华获得的La @ C_(82)和Li @ C_(60)薄膜。原位电学测量表明,对于La @ C_(82)和Li @ C_(60),这两种薄膜的半导体行为分别为21±8和1230±50 C2·cm的室温电阻率。根据电阻的温度依赖性,提出了一种可变范围的电导跳跃机制。计算了两种金属富勒烯的电子传输活化能。发现Li @ C_(60)膜结构的不可逆变化将电阻率提高到C60的典型值,发现温度升高。讨论了暴露于环境气氛对薄膜电导的影响。

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