Continuous hydrothermal synthesis of nickel oxide nanoplates and their use as nanoinks for p-type channel material in a bottom-gate field-effect transistor

摘要

Nickel oxide nanoplates were continuously synthesized by hydrothermal reaction using a flow-type reactor. The products had a thickness of 10 nm and a lateral size of 100–500 nm. The nanoplates were purified and drop-cast on a bottom-gate substrate and used as the channel material in a field-effect transistor after annealing at 300 C. The Id–Vd profile showed that the NiO nanoplates worked as the p-type semiconductor. This result suggests that various electronic devices can be prepared using metal oxide nanomaterials, which exhibit various properties including magnetism, ferroelectronics and catalysis as well as stability and safety in air and water.