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The fabrication of ordered arrays of exchange biased Ni/FeF2 nanostructures

机译:交换偏置Ni / FeF2纳米结构的有序阵列的制备

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The fabrication of ordered arrays of exchange biased Ni/FeF2 nanostructures by focused ion beam lithography is reported. High quality nano-elements, with controlled removal depth and no significant re-deposition, were carved using small ion beam currents (30 pA), moderate dwell times (1 mu s) and repeated passages over the same area. Two types of nanostructures were fabricated: square arrays of circular dots with diameters from 125 +/- 8 to 500 +/- 12 nm and periodicities ranging from 200 +/- 8 to 1000 +/- 12 nm, and square arrays of square antidots (207 +/- 8 nm in edge length) with periodicities ranging from 300 +/- 8 to 1200 +/- 12 nm. The arrays were characterized using scanning ion and electron microscopy, and atomic force microscopy. The effect of the patterning on the exchange bias field (i.e., the shift in the hysteresis loop of ferromagnetic Ni due to proximity to antiferromagnetic FeF2) was studied using magneto-transport measurements. These high quality nanostructures offer a unique method to address some of the open questions regarding the microscopic origin of exchange bias. This is not only of major relevance in the fabrication and miniaturization of magnetic devices but it is also one of the important proximity phenomena in nanoscience and materials science.
机译:报道了通过聚焦离子束光刻技术制造的交换偏置的Ni / FeF2纳米结构的有序阵列。使用较小的离子束电流(30 pA),适度的停留时间(1μs)并在同一区域重复通过,雕刻了具有可控去除深度且无明显再沉积的高质量纳米元素。制备了两种类型的纳米结构:直径为125 +/- 8至500 +/- 12 nm且周期范围为200 +/- 8至1000 +/- 12 nm的圆形点的正方形阵列,以及正方形解毒剂的正方形阵列(边缘长度为207 +/- 8 nm),周期范围为300 +/- 8至1200 +/- 12 nm。使用扫描离子和电子显微镜以及原子力显微镜对阵列进行表征。使用磁传输测量研究了图案化对交换偏置场的影响(即,由于靠近反铁磁FeF2,铁磁Ni的磁滞回线的偏移)。这些高质量的纳米结构提供了一种独特的方法来解决有关交换偏差的微观起源的一些悬而未决的问题。这不仅在磁性器件的制造和小型化中具有重大意义,而且还是纳米科学和材料科学中重要的邻近现象之一。

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