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首页> 外文期刊>Nano science & nano technology: an Indian journal >Preparation CuInSe2 (CIS) by arrested precipitation method as alight absorption layer of photovoltaic solar-cells
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Preparation CuInSe2 (CIS) by arrested precipitation method as alight absorption layer of photovoltaic solar-cells

机译:阻滞沉淀法制备CuInSe2(CIS)作为光伏太阳能电池的光吸收层

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摘要

The CuInSe2 (CIS) nanocrystals are synthesized by arrested precipitation from molecular precursors are added to a hot solvent with organic capping ligands to control nanocrystal formation and growth.CIS thin films deposited onto glass substrate by spray — coating, then selenized in Ar-atmosphere to form CIS thin films.PVs were made with power conversion efficiencies of 0.631% as —deposited and 0.846% after selenization, for Mo coated, under AM 1.5 illumination. X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) analysis it is evident that CIS have the chalcopyrite structure as the major phase with a preferred orientation along (112) direction and the atomic ratio of Cu: In: Se in the nanocrystals is nearly 1:1:2.
机译:CuInSe2(CIS)纳米晶体是通过将分子前驱物的沉淀物沉淀并添加到带有有机封端配体的热溶剂中来控制纳米晶体的形成和生长而合成的。CIS薄膜通过喷涂沉积在玻璃基板上,然后在Ar气氛中硒化以形成在AM 1.5照射下,对于Mo涂层,PV的沉积功率转换效率为0.631%沉积硒,硒化后为0.846%。 X射线衍射(XRD)和能量色散光谱(EDS)分析表明,CIS具有黄铜矿结构作为主要相,并沿(112)方向具有较好的取向,并且纳米晶体中Cu:In:Se的原子比几乎是1:1:2。

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