Tip-morphology-dependent field emission from ZnO nanorod arrays

摘要

Vertically well-aligned ZnO nanorod arrays with three kinds of tip morphology - abruptly sharpened, tapered and plane - have been controllably fabricated with wafer size uniformity by vapor phase transport and condensation. Except that the tip morphology is distinctly different, all of these nanorods are single crystalline, growing along their wurtzite 〈0001〉 axis, with similar diameters, lengths and densities. The field emission properties of these nanorod arrays are comparatively investigated and are found to be strongly affected by the tip morphology. A nanorod with the abruptly sharpened tip possesses the lowest turn-on and threshold electric fields as well as the highest field enhancement factor. Further analysis reveals that the abruptly sharpened tip morphology can reduce the screening effect more efficiently than the others. These results are very helpful for the design, fabrication and optimization of integrated field emitters using 1D nanostructures as the cathode material.