White light emitting diodes realized by using an active packaging method with CdSe/ZnS quantum dots dispersed in photosensitive epoxy resins

摘要

White light emitting diodes (LEDs) have been realized using the active packaging (AP) method. The starting materials were bare InGaN LED chips and CdSe/ZnS core-shell quantum dots (QDs) dispersed in photosensitive epoxy resins. Such hybrid LED devices were fabricated using QD mixtures with one ('single'), two ('dual') or four ('multi') emission wavelengths. The AP method allows for convenient adjustment of multiple parameters such as the CIE-1931 coordinate (x, y), color temperature, and color rending index (CRI). All samples show good white balance, and under a 20 mA working current the luminous efficacies of the single, dual, and multi hybrid devices were 8.1 lm W-1, 5.1 lm W-1, and 6.4 lm W-1, respectively. The corresponding quantum efficiencies were 4.1%, 3.1%, and 3.1%; the CRIs were 21.46, 43.76, and 66.20; and the color temperatures were 12 000, 8190, and 7740 K. This shows that the CRI of the samples can be enhanced by broadening the QD emission band, as is exemplified by the 21.46 CRI of the single hybrid LED compared to the 66.20 value for the multi hybrid LED. In addition, we were able to increase the CRI of the single hybrid LED from 15.31 to 32.50 by increasing the working currents from 1 to 50 mA.