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The electronic transport properties of ternary Cd_(1-x)Zn_xS nanowire networks

机译:Cd_(1-x)Zn_xS三元纳米线网络的电子输运性质

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We present the electronic transport characteristics of ternary alloy Cd_(1-x)Zn_xS nanowirenetworks in the dark and under white light illumination. Compared to the negligible darkcurrent, we observed a photocurrent enhancement of up to four orders of magnitude at anintensity of 460 mW cm~(-2). The time constant of the dynamic photoresponse is—5s. Thecurrent—voltage characteristics at different intensities show Ohmic behavior at low bias andspace charge limited conduction (SCLC) at higher bias voltages. The SCLC behavior and slowtime response indicate that the charge transport is dominated by tunneling at the percolatinginter-nanowire junctions.
机译:我们提出了在黑暗和白光照明下的三元合金Cd_(1-x)Zn_xS纳米线网络的电子传输特性。与可忽略的暗电流相比,我们观察到在460 mW cm〜(-2)的强度下,光电流增强了多达四个数量级。动态光响应的时间常数为-5s。在不同强度下的电流-电压特性显示出在低偏压下的欧姆特性和在较高偏压下的空间电荷限制传导(SCLC)。 SCLC行为和慢时响应表明,电荷传输主要由渗流互连-纳米线结处的隧穿控制。

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