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Selective tuning of the electronic properties of coaxial nanocables through exohedral doping

机译:通过面外掺杂选择性调节同轴纳米电缆的电子性能

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摘要

The electronic properties of exohedrally doped double-walled carbon nanotubes (DWNTs) have been investigated using density functional theory and resonance Raman spectroscopy (RRS) measurements. First-principles calculations elucidate the effects of exohedral doping on the M@S and S@M systems, where a metallic (M) tube is either inside or outside a semiconducting (S) one. The results demonstrate that metallic nanotubes are extremely sensitive to doping even when they are inner tubes, in sharp contrast to semiconducting nanotubes, which are not affected by doping when the outer shell is a metallic nanotube (screening effects). The theoretical predictions are in agreement with RRS data on Br-2- and H2SO4-doped DWNTs. These results pave the way to novel nanoscale electronics via exohedral doping.
机译:已使用密度泛函理论和共振拉曼光谱(RRS)测量研究了外掺双壁碳纳米管(DWNT)的电子性能。第一性原理计算阐明了面外掺杂对M @ S和S @ M系统的影响,其中金属(M)管位于半导体(S)管的内部或外部。结果表明,金属纳米管即使是内管也对掺杂极其敏感,这与半导体纳米管形成鲜明对比,后者在外壳为金属纳米管时不受掺杂的影响(屏蔽作用)。理论预测与掺杂Br-2-和H2SO4的DWNT的RRS数据一致。这些结果为通过面外掺杂为新型纳米电子学铺平了道路。

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