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Electrically conducting amorphous molecular material: Iodine doped m-MTDATA as a hole injection buffer layer in organic electroluminescent devices

机译:导电非晶态分子材料:碘掺杂的m-MTDATA作为有机电致发光器件中的空穴注入缓冲层

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An electrically conducting amorphous molecular material was prepared by iodine doping of 4,4',40"-tris[3-methylphenyl(phenyl)amino]triphenylamine(m-MTDATA). The use of iodine-doped m-MTDATA, which was identified as m-MTDATA radical cation species with counter anions, as a hole-injection buffer layer in tris(8-quinolinolato) aluminum (Alq(3))-based organic electroluminescent devices led to the reduction of drive voltage and the enhancement of external quantum efficiency as compared with the corresponding device using undoped m-MTDATA. It is indicated that the use of iodine-doped m-MTDATA facilitates not only hole injection from the ITO electrode but also electron injection from the cathode into Alq(3).
机译:通过碘掺杂4,4',40“-三[3-甲基苯基(苯基)氨基]三苯胺(m-MTDATA)制备导电非晶态分子材料。使用碘掺杂的m-MTDATA进行了鉴定作为具有反阴离子的m-MTDATA自由基阳离子种类,作为基于三(8-喹啉基)铝(Alq(3))的有机电致发光器件中的空穴注入缓冲层,导致驱动电压的降低和外部量子的增强与使用未掺杂的m-MTDATA的相应器件相比,其效率更高,这表明使用碘掺杂的m-MTDATA不仅有助于从ITO电极注入空穴,而且还有助于从阴极向Alq(3)注入电子。

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