Lateral Semiconductive and Polymer Conductive Nanolayered Structures: Preparation, Properties, and Application

摘要

Heterophase nanostructures with alternate semiconductor and electrolytic seams are received. It is shown that the insertion of a polymer composition into the van der Waals gap of crystals causes the additional potential barriers in them. A non-monotone change of the resistance of the obtained structure under applied potential, as well as the strong low-frequency dispersion, has been found out, which can be due to the polarization of double electric layers.