Structure and debye temperature of wurtzite GaN

摘要

High Pure Wurtzite structure GaN has been synthesized by gas reaction method. Its structure was determined by powder X-ray diffraction using the Rietveld technique. The positions in the unit cell for Ga and N were refined to be (0, 0, 0) and (0, 0, 0.3814). The Debye temperature was determined as 586 K from the refined temperature factor by using the Debye approximation.