Observation of Cu_2ZnSnS_4 thin film prepared by RF magnetron sputtering for heterojunction applications

摘要

In this paper, copper-zinc-tin-sulfide (Cu_2ZnSnS_4) thin film was successfully fabricated by radio-frequency (RF) magnetron sputtering on glass substrate. The structural, optical and electrical properties of the film were studied by X-ray photoelectron spectroscopy (XPS), laser micro-Raman spectrometer, field emission scanning electron microscope (FESEM), UV-VIS spectrophotometer and Hall effect measurement, respectively. The results show that Cu_2ZnSnS_4 film is of good quality. A good nonlinear rectifying behavior is obtained for the GZO/Cu_2ZnSnS_4 heterojunction. Under reverse bias, high photocurrent is obtained.