Pulse evolution in mid-infrared femtosecond optical parametric oscillator based on silicon-on-insulator waveguides

摘要

The pulse evolution of mid-infrared optical parametric oscillator based on silicon-on-insulator (SOI) waveguides is numerically investigated. The properties of pulse evolution in the process of optical parametric oscillation have been described. The numerical results show that the threshold of the optical parametric oscillation cavity can be lowered due to the high nonlinearity of the waveguide. The parametric signals initiate to oscillate when the circle trip number is 5 with the appropriate length of the SOI waveguide 7 mm. Meanwhile the peak power of the output signal pulse can be reached to 400 W at the stable situation when the circle trip number is over 10 with the conversion efficiency as high as 5%. This research can supply a kind of way to generate the mid-infrared femtosecond pulse at the highly stable on-chip integration level.