DONOR STATES IN SPHERICAL GAAS-GA1-XALXAS QUANTUM DOTS

摘要

The effect of the central cell correction on the binding energies of shallow donors in a spherical GaAs-Ga1-xAlxAs quantum dot is studied. The effective-mass approximation within a variational scheme is adopted and central cell corrections are calculated by using a Coulomb potential modified with an adjustable parameter. For small values of the radius of the dot large corrections are obtained for the shallow donors studied. [References: 9]