Theory of interface exciton with a hole confined in a quantum well

摘要

We develop a simple model of the interface exciton with an electron strongly confined in the interface plane and a hole confined in the quantum well. The main parameters of the theory are: the distance d between the interface plane and center of the quantum well, and the parameters of quantum well (the half-width a and the height V-0). Using the variational method, we obtained the binding energy and effective optical efficiency of this type of interface exciton. This model can be developed to investigate the properties of two-dimensional excitons in coupled quantum well(1).