Electronic and thermoelectric properties of pure and alloys In _2O_3 transparent conductors

摘要

Electronic and thermoelectric properties of pure In_2O _3 and In_(1.5)T_(0.5)O_3 (T=Sc, Y) alloys including the band gap, the electrical and thermal conductivity, Seebeck coefficient and figure of merit have been investigated using semi-classical Boltzmann transport theory. The calculated results indicated that substituting indium atoms by these dopants have a significant influence on the electronic properties of alloyed In_2O_3 crystals. Substitution of Sc and Y atoms for In atoms increases the band gaps and Seebeck coefficient. The intrinsic relations between electronic structures and the transport performances of In_2O_3 and its alloys with Sc and Y are also discussed.