Microwave noise performance of metamorphic InP/In{sub}0.53Ga{sub}0.47As/InP DHBT on GaAs substrates

摘要

The microwave noise performances of metamorphic (MM) InP/In{sub}0.53Ga{sub}0.47As/InP double-heterojunction bipolar transistors (DHBTs) on GaAs substrate are investigated for the first time. The noise figures and associated gains of the device with an emitter size of 5 x 5 μm{sup}2 are studied in the frequency range of 2-10 GHz. The variations of minimum noise figure at different collector currents are presented. At 2 GHz, the best minimum noise figure (F{sub}(MIN)) of 2.1 dB with an associated gain (G{sub}(ASS)) of 12.7 dB have been achieved at V{sub}(CE) = 1.5 V and 1c = 0.3 mA (1.2 kA/cm{sup}2). For comparable size and current density these results show noise performance comparable to those of reported lattice-matched InP HBT at lower frequency (～2 GHz).