DESIGN AND ANALYSIS OF HIGH-POWER InP-BASED HETEROSTRUCTURE BARRIER VARACTOR MULTIPLIERS

摘要

The heterostructure barrier varactor design method aims at finding optimum epitaxial layer structure and device geometry to improve the diode power handling capability. The nonlinear thermal resistance of the HBV and an empirical expression introducing the leakage current are proposed and added to the electro-thermal HBV model. Finally, the HBV model is used to simulate various devices.