1.57-μm InP-BASED RESONANT-CAVITY-ENHANCED PHOTODETECTOR WITH InP/AIR-GAP BRAGG REFLECTORS

摘要

We have demonstrated a monolithic and cost-effective InP-based resonant-cavity-enhanced photodetector with an InP/air-gap distributed Bragg reflector (DBR) fabricated by using selective wet etching, Peak quantum efficiency is 54% at 1.57μm, which corresponds to nearly two-fold enhancement versus a conventional detector of the same absorption depth, a 3-dB bandwidth of 6.8 GHz was achieved with the active area of 50 × 50 μm{sup}2