A LOW-LOSS PLANAR GOUBAU LINE AND A COPLANAR-PGL TRANSITION ON HIGH-RESISTIVITY SILICON SUBSTRATE IN THE 57-64 GHz BAND

摘要

Planar Goubau line (PGL) structures on high-resistivity silicon are adapted to the 57-64 GHz frequency band. Simulations and measurements show a lower attenuation than with the coplanar line is obtained. Very low losses are attained with a measured average attenuation of 0.064 dB/mm on the whole band. To allow this measurement, coplanar-PGL transitions have been optimized.