200-GHz BANDWIDTH ON WAFER CHARACTERIZATION OF CMOS NONLINEAR TRANSMISSION LINE USING ELECTRO-OPTIC SAMPLING

摘要

A free running electro-optic sampling system for on wafer characterization of a 65-nm technology CMOS nonlinear transmission line with the assessment of device performance up to 200 GHz is described. Noise and relative timing jitter between laser and microwave source, as the major limiting factors for the system dynamic range and bandwidth, are studied. Eventually enhancing the system measurement bandwidth using a fast method, and durable against timing jitter, is achieved at the expense of degraded system noise.