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Determination of cadmium by an improved double chamber electrothermal vaporization inductively coupled plasma atomic emission spectrometry

机译:改进的双室电热汽化电感耦合等离子体原子发射光谱法测定镉

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An improved double chamber electrothermal vaporization (ETV) system was designed. A new inner chamber and its bottom plate made of quartz glass were attached with carrier support gas inlet port for the determination of cadmium by inductively coupled plasma atomic emission spectrometry (ICP-AES). The use of the inner chamber in combination with the plate played important roles to transport the metal vapor efficiently into argon ICP. Ten-mu l sample aliquots were dried at 100 degrees C and subsequently heated at 1000 degrees C on the tungsten boat furnace. The evolved vapor was swept into the ICP source through PTFE tubing and the inner chamber by a 0.8 l/min H-2 (7%)-Ar carrier gas. The performance parameters of ETV-ICP-AES such as temperature program and gas flow rate were evaluated using cadmium standard solution. Under the optimized experimental conditions, the best attainable detection limit at Cd II 214.438 nm line was 0.2 ng/ml with linear dynamic ranges of 50 to 10,000 ng/ml for cadmium. The instrumental precision expressed as the relative standard deviation (RSD) from ten replicate measurements of 10,000 ng/ml for cadmium by ETV-ICP-AES was 0.85%. The present method has been successfully applied to the determination of cadmium in zinc-base materials.
机译:设计了一种改进的双室电热汽化(ETV)系统。在一个新的石英玻璃内腔及其底板上安装了载气支持气体入口,用于通过电感耦合等离子体原子发射光谱法(ICP-AES)测定镉。结合使用内部腔室和板起到了重要作用,可将金属蒸气有效地传输到氩ICP中。将十微升样品等分试样在100摄氏度下干燥,然后在钨舟炉上在1000摄氏度下加热。放出的蒸气通过PTFE管和内腔被0.8 l / min的H-2(7%)-Ar载气吹扫到ICP源中。使用镉标准溶液评估了ETV-ICP-AES的性能参数,例如温度程序和气体流速。在优化的实验条件下,Cd II 214.438 nm线的最佳可达到检出限为0.2 ng / ml,镉的线性动态范围为50至10,000 ng / ml。通过ETV-ICP-AES对十次10,000 ng / ml镉的重复测量得出的仪器精度表示为相对标准偏差(RSD)为0.85%。本方法已成功应用于锌基材料中镉的测定。

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