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The rate controlling diffusion process for the growth of helium bubbles in pure nickel

机译:纯镍中氦气气泡生长的速率控制扩散过程

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摘要

Pure nickel was implanted homogeneously withabout 1000 appm of helium at room temperature. The formationand growth of helium bubbles during post irradiation annealingwas studied by transmission electron microscopy. Bubbles grew bymigration and coalescence under such experimental condition. Thesizes of the bubbles formed in the bulk and those near thesurfaces/pseudo surfaces were compared. The bubbles formed inthe bulk are smaller by an order of magnitude than those nearsurfaces. The migration rates of bubbles by three possiblemechanisms viz. Vapour transport, volume diffusion and surfacediffusion have been estimated. It is seen that the rate controllingmechanism for growth of bubbles is surface diffusion.
机译:在室温下,将纯镍和约1000 appm的氦均匀注入。利用透射电子显微镜研究了辐照退火后氦气气泡的形成和生长。在这种实验条件下,气泡由于迁移和聚结而增长。比较了在本体中形成的气泡的大小以及在表面/伪表面附近的气泡的大小。本体中形成的气泡比近表面的气泡小一个数量级。气泡通过三种可能的机理的迁移率。估计了蒸气的输送,体积扩散和表面扩散。可以看出,气泡生长的速率控制机制是表面扩散。

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