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Formation of Particulate Fe-Al Films by Selective Oxidation of Aluminum

机译:铝的选择性氧化形成Fe-Al颗粒薄膜

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Fe-5wt%Al films were RF-sputtered and annealed in an atmosphere of hydrogen and water vapor mixture at 1173 K for up to 200 min in order to selectively oxidize aluminum. As the annealing time increased, the morphology of the films changed from the continuous to the discontinuous type; thus, particulate Fe-Al films formed after 100 min. Thermodynamics simulation was performed to determine the ideal conditions for this process. Temperatures exceeding 1073 K are necessary to prevent iron from oxidation confirmed by both the depth profile in XPS and magnetic moment increment in VSM. Annealing the films in an atmosphere with a very low dew point of 77 K did not make the films become particulate. New findings are expected to be applied to the thin film inductors for GHz application as well as to manufacturing process of nanoparticles.
机译:将Fe-5wt%Al薄膜进行RF溅射,并在氢气和水蒸气混合物的气氛中于1173 K退火200分钟,以选择性地氧化铝。随着退火时间的增加,薄膜的形态从连续型转变为不连续型。因此,在100分钟后形成了颗粒状的Fe-Al膜。进行热力学模拟以确定该过程的理想条件。为防止铁被XPS中的深度曲线和VSM中的磁矩增量所确认,必须有超过1073 K的温度。在具有非常低的露点77 K的气氛中对薄膜进行退火不会使薄膜变成颗粒状。有望将新发现应用于GHz应用的薄膜电感器以及纳米颗粒的制造过程。

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