The physical properties of nickel doped indium oxide thin film prepared by the sol-gel method and its potential as a humidity sensor

摘要

Ni doped In2O3 (Ni-x[n(2-x)O(3): x=0.00, 0.02, 0.04, 0.06, 0.08 and 0.10) films have been successfully prepared by a sol-gel method. All films have nanograins, cubic structures and single phase. The Ni un-systematically affected the film thickness and surface roughness. All films showed high transmission percentage i.e. in the range of 92-99% at wavelength more than 380 nm. All films except film with x=0.02 and 0.06 have magnetic properties. It is also found that all of the films were sensitive towards the humidity changes and can be used as a humidity sensor. (C) 2016 Elsevier Ltd. All rights reserved.