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Effect of Grain Boundary Structure on Misorientation Change of Pure Copper Bicrystals Pressed by One-Pass Equal-Channel Angular Pressing

机译:晶界结构对单道等通道角挤压挤压纯铜双晶取向错误变化的影响

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摘要

Following a previous paper, (Materials Transactions, Vol. 53 (2012), p. 1858), which reports on the dynamic misorientation change absorbed by the grain boundaries themselves during one-pass equal-channel angular pressing (ECAP), the effect of grain boundary structure on the misorientation change during ECAP was examined as the next step. Two bicrystals with a S3 {111} grain boundary and a random one were subjected to ECAP for one pass, and compared. Both the bicrystals were designed to have a similar.slip pattern where slip activity was concentrated on one slip plane. Direct evidence of misorientation changes absorbed by grain boundary themselves was obtained again, and its marked dependency on grain boundary structure became evident. Namely, in S3 grain boundary, misorientation was partially carried by the grain interior in its vicinity, which stems from the dislocation accumulation. On the other hand, in the random grain boundary, most of the misorientation was carried by the boundary itself. These differences are discussed in terms of the capability as a sink of lattice dislocations during severe plastic deformation.
机译:继前一篇论文(Materials Transactions,Vol.53(2012),p.1858)之后,该论文报道了在单程等通道角挤压(ECAP)过程中,晶界自身吸收的动态取向错误变化,以及下一步研究了ECAP期间取向取向变化的晶界结构。将两个具有S3 {111}晶界的双晶和一个随机的双晶进行ECAP加工一遍,并进行比较。两个双晶都设计为具有相似的滑模,其中滑移活动集中在一个滑移面上。再次获得了晶界本身吸收的取向错误变化的直接证据,并且其明显依赖于晶界结构变得明显。即,在S3晶界中,取向不良是由于位错累积而部分地由附近的晶粒内部携带的。另一方面,在无规晶界中,大多数取向错误是由晶界本身承担的。这些差异是根据在严重塑性变形过程中晶格位错的吸收能力来讨论的。

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