Determination of relevant parameters of the dopants Zn and Te fromChyphen;Tmeasurements in GaP verbar;Zn,Overbar;phyphen;njunctions

摘要

Using the single time constant approximation of the small ac signal capacitance of the reversehyphen;biased GaP verbar;Zn,Overbar;phyphen;njunction, a good agreement with the experimentalChyphen;Tdependence in the 77ndash;110 K temperature range was found at high frequencies. The important parameters of the dopants Zn and Tehyphen;activation energy, concentration, degree of compensation, and thermal capture coefficienthyphen;are determined applying this model.