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首页> 外文期刊>Ferroelectrics: Letters Section >Piezoelectric Bimorph with Giant Electromechanical Coupling Factor of Bending Mode Nearly 70 percent Fabricated by Low Symmetry Mono-Domain Pb[(Zn_(1/3)Nb_(2/3))_(0.09)Ti_(0.09)]O_3 Single Crystals
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Piezoelectric Bimorph with Giant Electromechanical Coupling Factor of Bending Mode Nearly 70 percent Fabricated by Low Symmetry Mono-Domain Pb[(Zn_(1/3)Nb_(2/3))_(0.09)Ti_(0.09)]O_3 Single Crystals

机译:低对称单域Pb [(Zn_(1/3)Nb_(2/3))_(0.09)Ti_(0.09)O_3单晶制备具有弯曲模式巨机电耦合因子的压电双压电晶片接近70%

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摘要

Piezoelectric unimorphs and bimorphs were fabricated by utilizing (100) plane Pb[(Zn_(1/3)Nb_(2/3))_(0.91) Ti_(0.09)]O_3(PZNT91/09) single-crystal plates with giant k_(31) over 80 percent, which appeared in the case of a phase with low crystal symmetry. The electromechanical coupling factors on bending mode (k_b) were 64.7 percent (PZNT91/09 single crystals) and 20.6 percent (PZT ceramics) in the case of unimorphs. The values of k_b in bimorphs were 69.8 percent (PZNT91/09 single crystals) and 31.2 percent (PZT ceramics), respectively. Furthermore, the PZNT91/09 single-crystal bimorph showed the superior piezoelectric properties such as three times larger impedance ratio on the resonant and the anti-resonant frequencies. The single-crystal devices possessed the excellent displacement characteristics in comparison with the ones of the PZT ceramic devices.
机译:利用(100)平面Pb [(Zn_(1/3)Nb_(2/3))_(0.91)Ti_(0.09)] O_3(PZNT91 / 09)单晶板制造压电单晶和双晶。 (31)超过80%,出现在晶体对称性较低的相中。在单晶情况下,弯曲模式下的机电耦合系数(k_b)为64.7%(PZNT91 / 09单晶),弯曲模式的机电耦合系数为20.6%(PZT陶瓷)。双晶型的k_b值分别为69.8%(PZNT91 / 09单晶)和31.2%(PZT陶瓷)。此外,PZNT91 / 09单晶双压电晶片显示出优异的压电特性,例如在谐振和反谐振频率上的阻抗比大三倍。与PZT陶瓷器件相比,单晶器件具有出色的位移特性。

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