Dielectric properties of (1-x)Sr0.84Pb0.16TiO3-xBi(2)O(3) center dot 3TiO(2) ceramics for high voltage capacitor application

摘要

(1-x)Sr0.84Pb0.16TiO3-xBi(2)O(3) center dot TiO2(SPBT) (x = 0-0.14) were synthesized by solid-state reaction method. The effects of Bi2O3 center dot 3TiO(2) amount on structure of Sr0.84Pb0.16TiO3 ceramics were investigated. X-ray diffraction results reveal a pure perovskite structure for samples at x = 0-0.09, the second phase was appeared at x = 0.14. Dielectric measurements exhibit a relaxor-like characteristic for the SPBT ceramics. With addition of Bi2O3 center dot 3TiO(2) the dielectric constant increases at the room temperature for x <= .09 and the value is above 3000 for x = 0.07 and 0.09. The average dielectric breakdown strength reaches 114.4 kV/cm and the energy storage density is 0.702J/cm(3) at 10 kV/cm for x = 0.09. The Bi2O3 center dot 3TiO(2) doped Sr0.84Pb0.16TiO3 ceramics had good candidate material for high voltage capacitors applications.