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Effect of Sintering Temperature on Electrical Properties of Na_(0.5)K_(0.5)NbO_3 Lead-Free Piezoelectric Ceramics Prepared by Normal Sintering

机译:烧结温度对普通烧结法制备的Na_(0.5)K_(0.5)NbO_3无铅压电陶瓷电性能的影响

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摘要

The effects of sintering temperature on microstructure, density and electrical properties of Na_(0.5)K_(0.5)NbO_3 prepared by normal sintering at 1020-1100 deg C were investigated. All the Na_(0.5)K_(0.5)NbO_3 ceramics showed an orthorhombic structure similar to that of KNbO_3 ceramics, while raising sintering temperature resulted in the shifting of diffraction peaks to a lower value and the formation of a second phase due to the excess volatilization of Na. Both density and d_(33) of the sintered samples increase with increasing sintering temperature. The density of the sample sintered at 1080 deg C reaches a maximum value (4.22 g/cm~3, 92 percent of the theoretical density). The sample sintered at 1060 deg C showed a maximum d_(33) value of about 122 pC/N and the highest T_c of about 409 deg C, and the corresponding E_c and P_r were about 13 kV/cm and 15 mu C/cm~2, respectively.
机译:研究了烧结温度对1020-1100℃下正常烧结制备的Na_(0.5)K_(0.5)NbO_3的组织,密度和电学性能的影响。所有的Na_(0.5)K_(0.5)NbO_3陶瓷均表现出与KNbO_3陶瓷相似的正交结构,而提高烧结温度会导致衍射峰移至较低值,并且由于过度挥发而形成第二相娜烧结样品的密度和d_(33)都随着烧结温度的升高而增加。在1080℃下烧结的样品的密度达到最大值(4.22g / cm〜3,为理论密度的92%)。在1060摄氏度下烧结的样品的最大d_(33)值约为122 pC / N,最高T_c约为409摄氏度,相应的E_c和P_r约为13 kV / cm和15μC / cm〜 2,分别。

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