Influence of position-dependent effective mass, position-dependent dielectric screening function and anisotropy on the binding energy and interband emission energy of impurity doped Quantum dots in presence of Gaussian white noise

摘要

The binding energy (BE) and interband emission energy (IEE) of impurity doped quantum dot (QD) have been examined in absence and presence of noise. Special emphasis has been put on effective mass and dielectric constant of the system as they become dependent on dopant location. Noise employed is a Gaussian white noise and it is added to the system in two different pathways viz. additive and multiplicative. Anisotropy, dopant location-dependent effective mass and dielectric constant alter the magnitude of BE and IEE from their values in case of constant effective mass and dielectric constant. Application of noise maintains the qualitative features of BE and IEE profiles that have been observed in absence of noise. However, presence of noise affects their magnitude in a way that perspicuously depends on their pathway of application. The findings reveal elegant routes of controlling the BE and IEE of doped QD system in presence of noise; especially when the effective mass and dielectric constant of system heavily depend on dopant co-ordinates.