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首页> 外文期刊>Geophysical Research Letters >Along strike variations in the electrical structure of the San Andreas Fault at Parkfield, California
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Along strike variations in the electrical structure of the San Andreas Fault at Parkfield, California

机译:沿着罢工,加利福尼亚帕克菲尔德的圣安德烈亚斯断层的电气结构发生变化

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摘要

Magnetotelluric exploration has been used to image along strike variations in the electrical resistivity structure of the San Andreas Fault at Parkfield, California. A low resistivity wedge extending to a depth of several kilometers is continuous over a horizontal distance of 8 km. The base of the wedge is coincident with the shallowest microearthquakes. A change in the electrical and fluid connection of the San Andreas Fault with a low resistivity zone in the Franciscan formation is observed along the Parkfield segment. [References: 15]
机译:大地电磁勘探已用于沿加利福尼亚帕克菲尔德的圣安德烈亚斯断层的电阻率结构的走向变化成像。延伸到几千米深度的低电阻率楔形物在8 km的水平距离上是连续的。楔形的底部与最浅的微地震重合。沿着帕克菲尔德段,发现了方济各会地层中圣安地列斯断层的电和流体连接具有低电阻率区域的变化。 [参考:15]

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