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Photoluminescence of Amorphous Multilayer Structures a-C:H/a-Si:H

机译:非晶多层结构a-C:H / a-Si:H的光致发光

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摘要

The optical absorption edge and the photoluminescence spectra of amorphous hydrogenated diamond-like carbon(a-C:H)films are investigated in the temperature range 4.2-900 K.Low-dimensional multilayer structures alpha-C:H/a-Si:H,in which alpha-C:H with an optical band gap E_g=4.5 eV is used as a barrier,are prepared for the first time.It is found that amorphous hydrogenated silicon(a-Si:H)films with a thickness d< 100 A exhibit quantum-confinement effects.Analysis of the photoluminescence spectra and the optical absorption edge of the alpha-Si:H films shows that the structures omicron-C:H/a-Si:H have a sharp interface and that charge carriers in the alpha-Si:H film undergo quantization.
机译:研究了在4.2-900 K温度范围内非晶态氢化类金刚石碳(aC:H)薄膜的光吸收边缘和光致发光光谱。低维多层结构alpha-C:H / a-Si:H,in首次制备了光学带隙为E_g = 4.5 eV的α-C:H作为阻挡层。发现厚度为d <100 A的非晶氢化硅(a-Si:H)薄膜表现出量子约束效应。对α-Si:H薄膜的光致发光光谱和光吸收边缘的分析表明,omicron-C:H / a-Si:H结构具有清晰的界面,且α中的载流子为-Si:H薄膜经过量化。

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